Quantitative modelling of voltage oscillations and other oscillatory phenomena with the current burst model

摘要

The current burst model (CBM) has been extended to include more complex oscillatory phenomena of the Si electrode in aqueous HF. In particular it accounts for additional effects inherent to the voltage oscillations, i.e. capacitive effects, very small oxide thickness, etc. A powerful Monte-Carlo implementation now allows to simulate all presently known aspects of electrodes. Besides current oscillations under potentiostatic conditions, the CBM can now quantitatively produce voltage oscillations and other more complex phenomena like driven oscillations in close agreement with experiments. New data extraction routines provide information about, e.g., correlation lengths and thus bridge the gap to general non-linear pattern formation theories. The CBM is far simpler than competing theories, but is nevertheless the only model presently capable of quantitatively simulating all aspects of oscillatory phenomena of the Si electrode.