On the use of the thermal step method as a tool for study of space charge in semiconductor gallium nitride: GaN

摘要

Thermal step method (TSM) is a non destructive technique which measures the distribution of electric field and the space charge density across a solid insulators. In this paper, we report the experimental results obtained by the Thermal step method (TSM) and The capacitive voltage (C-V) characterisations of the gallium nitride films grown by the Metal Organic Vapour Phase Epitaxy on silicon substrate. The C-V curves shows a MOS structure behaviours, this was attributed to the existence of an SiO_2 insulator between silicon and GaN. Experimental results were in good accordance with TSM measurements. These where performed under different applied bias voltage, remnant saturation current indicate a sign inversion above -75 mV.