GaN MMICs for RF power applications in the 50 GHz to 110 GHz frequency range

摘要

At 2006 IEDM outstanding potential of GaN MMIC technology for RF power applications at frequencies exceeding 80 GHz was reported for the first time. The first reported W-band GaN power MMIC had over 16 dB of saturated power gain in a frequency range between 78 GHz and 88 GHz and produced almost the same output power at this frequencyrnband as the stale of the art InP HF.MT MMIC with 10 times larger output device periphery. In this presentation we will describe improvements in GaN MMIC process that led to these breakthrough results and discuss the impact of GaN technology on the development of high frequency millimcler-wave power modules.