Optical properties of AglnS_2 thin films prepared by sulfurization of evaporated metal precursors

Shigeyuki Nakamura; Satoru Seto

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Optical properties of AglnS_2 thin films prepared by sulfurization of evaporated metal precursors

机译：蒸发金属前驱体硫化制备AgInS_2薄膜的光学性能

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摘要

Photoluminescence study has been demonstrated for AgInS_2 thin films prepared by sulfurization of metal-evaporated precursors as well as XRD measurement. We have found thern1.79 eV DAP recombination emission for the stoichiometric thin film containing both chalcopyrite and orthorhombic form.

机译：已经证明了通过金属蒸发的前驱体的硫化以及XRD测量制备的AgInS_2薄膜的光致发光研究。我们已经发现含有黄铜矿和正交晶形式的化学计量薄膜的1.79 eV DAP复合发射。

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《Physica status solidi》 |2009年第5期|1137-1140|共4页
作者
Shigeyuki Nakamura; Satoru Seto;
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作者单位

Tsuyama National College of Technology, Numa Tsuyama, Okayama 708-8509 Japan;

Ishikawa National College of Technology, Kitachujo, Tsubata, Kahoku-gun, Ishikawa 929-0392, Japan;

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正文语种 eng
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other inorganic semiconductors; other solid inorganic materials; vacuum deposition;

机译：其他无机半导体;其他固体无机材料;真空沉积;

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Optical properties of AglnS_2 thin films prepared by sulfurization of evaporated metal precursors

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