Atomic force microscopy based room temperature photocurrent-spectroscopy of single subsurface InAs quantum dots

摘要

In this work, we present a scheme for room temperature detection of single subsurface InAs quantum dots buried in GaAs by Atomic Force Microscopy based local photocurrent spectroscopy. The measurements were performed at room temperature and ambient conditions. The AFM was used as a nanopositioning system and the AFM tip was used to create arnnano-scale Schottky contact in the vicinity of a QD. The photocurrent spectra clearly showed peaks from quantum dots located in the vicinity of the AFM tip. The spatial resolution of the method was determined to be in between 100 nm and 1000 nm.