首页> 外文期刊>Photovoltaics, IEEE Journal of >Na Doping of CIGS Solar Cells Using Low Sodium-Doped Mo Layer
【24h】

Na Doping of CIGS Solar Cells Using Low Sodium-Doped Mo Layer

机译:使用低钠掺杂Mo层对CIGS太阳能电池进行Na掺杂

获取原文
获取原文并翻译 | 示例
           

摘要

Na plays an important role in the electrical performance of Cu(In,Ga)Se $_{2}$ (CIGS) thin-film solar cells. Traditionally, Na has been introduced during the growth of CIGS by thermal diffusion from the soda-lime glass (SLG) substrate; however, better control of the amount of Na is needed to have a more precise control of growth conditions. The introduction of Na into CIGS was studied in three different ways: from the SLG, from a NaF precursor, and from a Na-doped Mo (MoNa) back contact. The most successful approaches were obtained by using the conventional SLG and the NaF precursor. Different growth temperatures of CIGS were tested in an attempt to diffuse more Na from the MoNa layer.
机译:Na在Cu(In,Ga)Se $ _ {2} $(CIGS)薄膜太阳能电池的电性能中起重要作用。传统上,钠是通过从钠钙玻璃(SLG)基板进行热扩散而在CIGS生长过程中引入的。但是,为了更好地控制生长条件,需要更好地控制Na的含量。将Na引入CIGS的方法有3种:从SLG,从NaF前驱体和从掺Na的Mo(MoNa)背接触。通过使用常规SLG和NaF前驱体可获得最成功的方法。为了从MoNa层中扩散出更多的Na,对CIGS的不同生长温度进行了测试。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号