Modeling the Impact of Bulk Resistivity on Bifacial n-PERT Rear-Junction Solar Cells

摘要

This work mainly focuses on modeling the impact of bulk resistivity $ ho_b $ on the bifacial n -type passivated emitter rear and totally diffused rear-junction ( n -PERT-RJ) solar cells using Quokka3. Through simulation, under the front illumination, the light-generated excess carrier flow behavior in the bulk is studied. The regulatory function of the rear-junction solar cells’ bulk on the electron flows distributary is discussed. Finally, how the different $ ho_b $ values affect the hole-current flow behavior and the FSF performance is revealed. This explains very well the reasons for decreasing short-circuit current J _SC because of the low $ ho_b $ wafers in n -PERT-RJ solar cells. The studies also provide insights on the lowest value of $ ho_b $ that can be applied to n -PERT-RJ solar cells without the efficiency deterioration. We also simulated the n -PERT-RJ solar cell performance and bifaciality when applying different $ ho_b $ values under rear illumination. Last but not the least, investigation on how $ ho_b $ affects the output performance will be extended to when n- PERT-RJ solar cells are served as the bottom subcell in a four-terminal tandem configuration.