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首页> 外文期刊>Organic Electronics >Crystal structure and charge-transport properties of N-trimethyltriindole: Novel p-type organic semiconductor single crystals
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Crystal structure and charge-transport properties of N-trimethyltriindole: Novel p-type organic semiconductor single crystals

机译:N-三甲基三吲哚的晶体结构和电荷传输性质:新型p型有机半导体单晶

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摘要

We report on a new p-type organic semiconductor single crystal, 5,10,15-trimethyl-10,15-dihydro-5H-diindolo[3,2-α:3',2'-c]carbazole (N-trimethyltriindole). This molecule crystallizes forming a highly ordered columnar structure in which stacked molecules are situated at two alternating distances (3.53 A and 3.68 A) along the column as determined by single crystal X-ray diffraction analysis. These short intermolecular distances between adjacent units, make this system an ideal candidate for charge-transport processes along the stacks. Relevant parameters for transport (i.e. internal reorganization energies, transfer integral) have been estimated by DFT calculations at a 6-311G(d,p)/B3LYP level of theory. As a double check for the transfer integral, the electronic band structure of a one-dimensional stack of molecules has been computed. The electronic properties of this material have been studied both theoretically and experimentally. Its HOMO value is found to coincide with Au work function (Φ_(Au) = 5.1 eV), thus low barriers are expected for hole injection from gold electrodes. The hole mobility of this material has been predicted theoretically considering a hopping-type mechanism for the charge-transport and determined experimentally at the space charge limited current (SCLC) regime of the current-voltage measurements. Both theoretical and experimental values are in good agreement. The high hole mobility (μmin = 0.4 cm~2 V~(-1) s~(-1)) of this material points towards its useful application in the organic electronics arena. N-Trimethyltriindole single crystals constitute an essential model to study transport properties of triindole-based materials and to design new derivatives with improved electronic performance.
机译:我们报道了一种新型的p型有机半导体单晶5,10,15-三甲基-10,15-二氢-5H-二吲哚并[3,2-α:3',2'-c]咔唑(N-三甲基三吲哚)。该分子结晶形成高度有序的柱状结构,其中堆叠的分子沿柱位于两个交替的距离(3.53 A和3.68 A),这是通过单晶X射线衍射分析确定的。相邻单元之间的这些短分子间距离使该系统成为沿电池堆进行电荷传输过程的理想候选者。通过DFT计算以理论值6-311G(d,p)/ B3LYP估计了运输的相关参数(即内部重组能量,转移积分)。作为转移积分的双重检查,已经计算了一维分子堆叠的电子能带结构。这种材料的电子性能已经在理论和实验上进行了研究。发现其HOMO值与Au功函数(Φ_(Au)= 5.1 eV)吻合,因此从金电极注入空穴的势垒较低。从理论上考虑了电荷传输的跳跃型机制,已经预测了该材料的空穴迁移率,并在电流-电压测量的空间电荷限制电流(SCLC)情况下通过实验确定了该材料。理论值和实验值均吻合良好。这种材料的高空穴迁移率(μmin= 0.4 cm〜2 V〜(-1)s〜(-1))表明了其在有机电子领域的有用应用。 N-Trimethyltriindole单晶构成了研究基于Triindole的材料的传输特性并设计具有改善的电子性能的新衍生物的基本模型。

著录项

  • 来源
    《Organic Electronics》 |2009年第4期|643-652|共10页
  • 作者单位

    Institute de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;

    Institute de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;

    Institute de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;

    Institute de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;

    Institute de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;

    Institute de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;

    Departamento de Fisica, Escuela Politecnica Superior, Universidad Carlos III de Madrid, Avenida Universidad 30, 28911, Madrid, Spain;

    Institute de Ciencia de Materiales de Madrid, CSIC, Cantoblanco, E-28049 Madrid, Spain;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    hole transport; organic semiconductor; single crystals;

    机译:空穴传输;有机半导体单晶;

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