首页> 外文期刊>Organic Electronics >One-step micropatterning of highly-ordered semi-crystalline poly(vinylidene fluoride-co-trifluoroethylene) films by a selective shear and detachment process
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One-step micropatterning of highly-ordered semi-crystalline poly(vinylidene fluoride-co-trifluoroethylene) films by a selective shear and detachment process

机译:通过选择性剪切和分离工艺对高序半结晶聚偏二氟乙烯-三氟乙烯共聚物薄膜进行一步微图案化

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摘要

We present a one-step route for micropatterning a thin ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) film with both molecular and microstructural crystal control over a large area. The method is based on the static mechanical shearing and subsequent detachment of a film spin coated on pre-patterned Al which has been lithographically prepared on a SiO_2 substrate under appropriate thermal conditions. Selective detachment of the film in contact with the SiO_2 substrate gave rise to micropatterns of PVDF-TrFE film positioned only on the Al regions. Further, the PVDF-TrFE film showed 25-nm-thick crystalline lamellae aligned perpendicular to the shear direction, wherein the c axis of the crystals was globally ordered parallel to the shear direction. The sheared and patterned PVDF-TrFE thin films are readily incorporated into non-volatile memory units of metal/ferroelectric/metal capacitors and bottom gate-top contact field effect transistors, leading to arrays of memory devices with enhanced performance.
机译:我们提出了一步一步的方法,用于在大面积上对分子结构和晶体结构进行控制的薄铁电聚偏二氟乙烯-三氟乙烯共聚物(PVDF-TrFE)薄膜进行微图案化。该方法基于静态机械剪切和随后剥离旋涂在预先图案化的Al上的薄膜,该薄膜已在适当的热条件下通过SiO_2基板光刻制备。与SiO 2衬底接触的膜的选择性分离产生仅位于Al区域上的PVDF-TrFE膜的微图案。此外,PVDF-TrFE膜显示出与剪切方向垂直排列的25nm厚的晶体薄片,其中晶体的c轴总体上平行于剪切方向排列。剪切和图案化的PVDF-TrFE薄膜可以很容易地并入金属/铁电/金属电容器和底部栅顶接触场效应晶体管的非易失性存储单元中,从而形成具有增强性能的存储设备阵列。

著录项

  • 来源
    《Organic Electronics》 |2011年第1期|p.98-107|共10页
  • 作者单位

    Department of Materials Science and Engineering, Yonsei University. Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University. Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Cwangju Institute of Science and Technology (CIST), 261 Cheomdan-gwagiro (Oryong-dong) Buk-gu,Cwangju 500-712, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University. Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University. Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University. Seoul 120-749, Republic of Korea;

    Department of Materials Science and Engineering, Cwangju Institute of Science and Technology (CIST), 261 Cheomdan-gwagiro (Oryong-dong) Buk-gu,Cwangju 500-712, Republic of Korea;

    Department of Chemistry, Hanyang University, Seoul 133-791, Republic of Korea;

    Department of Materials Science and Engineering, Yonsei University. Seoul 120-749, Republic of Korea;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    ferroelectric polymer; static shear; detachment; micropattern; crystal orientation; non-volatile memory;

    机译:铁电聚合物;静态剪切;脱离;微图案;晶体取向;非易失性记忆;

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