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Origin of enhanced electrical and conducting properties in pentacene films doped by molybdenum trioxide

机译:三氧化钼掺杂并五苯薄膜增强电导性能的起源

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摘要

Molybdenum trioxide (MoO_3) doped organic semiconductors have shown attractive applications in organic electric devices. The authors carried out an investigation on the origin of enhanced photoelectric characteristics in MoO_3-doped pentacene films. Electrical properties including charge transport, trap density and conductivity in bulk MoO_3-doped pentacene films were investigated through fundamental measurements of current-voltage characteristics. Electrical structure and conducting mechanism in MoO_3-doped pentacene films were further evaluated by X-ray diffraction and X-ray photoelectron spectroscopy measurements. The experimental results suggest that the improved conductivity in MoO_3-doped pentacene film was partly associated with the increased ratio of low Mo oxidation state (Mo~(4+)) with a fact of better conducting property of MoO_2 than that MoO_3.
机译:掺杂三氧化钼(MoO_3)的有机半导体在有机电子设备中显示出有吸引力的应用。作者对掺杂MoO_3的并五苯薄膜中增强的光电特性进行了研究。通过基本测量电流-电压特性,研究了块状MoO_3掺杂并五苯薄膜的电学性质,包括电荷传输,陷阱密度和电导率。通过X射线衍射和X射线光电子能谱测量进一步评估了MoO_3掺杂并五苯薄膜的电结构和导电机理。实验结果表明,MoO_3掺杂并五苯薄膜的电导率的提高部分与低Mo氧化态(Mo〜(4+))的增加有关,而MoO_2的导电性能优于MoO_3。

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  • 来源
    《Organic Electronics 》 |2013年第10期| 2698-2704| 共7页
  • 作者单位

    Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM),Soochow University, Suzhou, Jiangsu 215123, China,School of Energy, Soochow University, Suzhou, Jiangsu 215006, China;

    Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM),Soochow University, Suzhou, Jiangsu 215123, China;

    Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM),Soochow University, Suzhou, Jiangsu 215123, China;

    Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM),Soochow University, Suzhou, Jiangsu 215123, China,Faculty of Engineering, University of Toyama, Gofuku 3190, Toyama 930-8555, Japan;

    Faculty of Engineering, University of Toyama, Gofuku 3190, Toyama 930-8555, Japan;

    Faculty of Engineering, University of Toyama, Gofuku 3190, Toyama 930-8555, Japan;

    Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM),Soochow University, Suzhou, Jiangsu 215123, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    MoO_3-doped pentacene; Trap density; Conductivity; Charge transfer;

    机译:MoO_3掺杂的并五苯;陷阱密度;电导率费用转移;

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