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机译:通过直接在SiO_2绝缘体上控制初始的逐层生长模式来增强并五苯薄膜晶体管的电导率
National Center for Nanoscience and Technology, No. 11, Beiyitiao Zhongguancun, Beijing 100190, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China;
Department of Physics, Tsinghua University, Beijing 100084, China;
National Center for Nanoscience and Technology, No. 11, Beiyitiao Zhongguancun, Beijing 100190, China;
National Center for Nanoscience and Technology, No. 11, Beiyitiao Zhongguancun, Beijing 100190, China;
National Center for Nanoscience and Technology, No. 11, Beiyitiao Zhongguancun, Beijing 100190, China Graduate School of Chinese Academy of Sciences, Beijing 100049, China;
机译:通过控制初始膜生长模式来增强Sio_2上并五苯薄膜晶体管的载流子迁移率
机译:通过修改栅极绝缘体表面,增强并五苯有机薄膜晶体管的电性能
机译:在光取向聚合物绝缘体上并五苯增强了有机薄膜晶体管的电性能
机译:五烯胶质厚度对有机薄膜晶体管的影响:五烯/绝缘界面的作用
机译:并五苯晶体取向的技巧,以提高溶液处理的有机薄膜晶体管的性能。
机译:并五苯薄膜晶体管栅绝缘子的聚(4-乙烯基苯酚)交联过程的快速低功率微波感应加热方案研究
机译:在光对准聚合物绝缘子上通过并五苯有序薄膜晶体管的增强电性能