Thermal stability of devices with molybdenum oxide doped organic semiconductors

摘要

We demonstrate the thermal stability of transition-metal-oxide (molybdenum oxide; MoO_3)-doped organic semiconductors. Impedance spectroscopy analysis indicated that thermal deformation of the intrinsic 1,4-bis[N-(1-naphthyl)-N'-phenylamino]-4,4'-diamine (NPB) layer is facilitated when the MoO_3-doped NPB layer is deposited on the intrinsic NPB layer. The resistance of the intrinsic NPB layer is reduced from 300 kΩ to 3 kΩ after thermal annealing at 100 ℃ for 30 min. Temperature-dependent conductance/angular frequency-frequency (G/w-f-T) analysis revealed that the doping efficiency of MoO_3, which is represented by the activation energy (E_a). is reduced after the annealing process.