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Effects of thermal annealing on the electronic structure and hole-injection properties of molybdenum-doped zinc oxideorganic semiconductor interfaces

机译:热退火对掺钼氧化锌有机半导体界面电子结构和空穴注入性能的影响

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摘要

In this paper, we investigate an electronic structure and hole-injection properties of organic light-emitting devices (OLEDs) based on molybdeum-doped zinc oxide (MZO) anode. Our studies reveal that operation voltage and current efficiency of the device are associated with work function and surface roughness of anode, respectively. From the experimental results, we found that the formation of S-metal bonds and the removal of dangling bonds in the thermal-annealed MZO film could lead to an increase in the surface energy and the work function, meaning that thermal-annealing might be more helpful in improving the efficiency of MZO based organic devices.
机译:在本文中,我们研究了基于钼掺杂的氧化锌(MZO)阳极的有机发光器件(OLED)的电子结构和空穴注入特性。我们的研究表明,器件的工作电压和电流效率分别与阳极的功函数和表面粗糙度有关。从实验结果中,我们发现在热退火的MZO膜中S-金属键的形成和悬空键的去除可能导致表面能和功函数的增加,这意味着热退火可能更有效。有助于提高基于MZO的有机器件的效率。

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