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Highly sensitive and ultralow detection limit of room-temperature NO_2 sensors using in-situ growth of PPy on mesoporous NiO nanosheets

机译:在中孔NiO纳米片上原位生长PPy的室温NO_2传感器的高灵敏度和超低检测限

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摘要

Recently, inorganic-organic nanocomposites-based gas sensors have attracted great attention because they usually exhibit enhanced sensing properties compared to single component due to the formation of hetero-junction and the existing organic functional groups. Here, to improve the sensing properties of NiO and further detail the sensing mechanism of inorganic-organic nanocomposites-based sensors, polypyrrole (PPy)-function-alized NiO nanosheets were prepared for room-temperature NO_2 sensing. The gas-sensing studies revealed that the response of PPy-NiO nanocomposites (45) to 60 ppm NO_2 at room temperature is 30 times larger than that of the bare NiO (1.5). According to the fitting curves of the relationship between the sensitivity and NO2 concentration, the detection limit was calculated to be 49 ppb, indicating its potential application. On the basis of the energy band diagram, the significantly enhanced sensitivity of nanocomposites was attributed to the increased number of nickel vacancies induced by the effective charge transferring from PPy to NiO. Moreover, based on the different sensitivity of nanocomposites with different molar ratios, the relative importance of heterojunction resistance and bulk resistance was also clarified by constructing equivalent circuit model. We hope this work could guide us to explore more inorganic-organic nanocomposites-based sensors with the even higher sensing performances.
机译:近来,基于无机-有机纳米复合材料的气体传感器由于形成异质结和现有的有机官能团,与单组分相比通常具有增强的感测性能,因此备受关注。在这里,为了改善NiO的传感特性并进一步详细说明基于无机有机纳米复合材料的传感器的传感机理,制备了用于室温NO_2传感的聚吡咯(PPy)功能化的NiO纳米片。气体传感研究表明,PPy-NiO纳米复合材料(45)在室温下对60 ppm NO_2的响应比裸NiO(1.5)的响应大30倍。根据灵敏度与NO2浓度之间关系的拟合曲线,计算出的检出限为49 ppb,表明其潜在的应用前景。根据能带图,纳米复合材料的灵敏度显着提高归因于有效电荷从PPy转移到NiO引起的镍空位数量增加。此外,基于不同摩尔比的纳米复合材料的不同敏感性,通过建立等效电路模型,还阐明了异质结电阻和体电阻的相对重要性。我们希望这项工作可以指导我们探索更多具有更高传感性能的基于无机有机纳米复合材料的传感器。

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  • 来源
    《Organic Electronics》 |2020年第2期|105504.1-105504.9|共9页
  • 作者单位

    State Key Laboratory of Materials Processing and Die Mould Technology Huazhong University of Science and Technology (HUST) No. 1037 Luoyu Road Wuhan 430074 China Research School of Engineering College of Engineering and Computer Science The Australian National University Canberra Australian Capital Territory 2601 Australia;

    State Key Laboratory of Materials Processing and Die Mould Technology Huazhong University of Science and Technology (HUST) No. 1037 Luoyu Road Wuhan 430074 China;

    School of Chemistry and Chemical Engineering Huazhong University of Science and Technology (HUST) No. 1037 Luoyu Road Wuhan 430074 China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    The lower detection limit; Charge transfer; Heterojunction resistance; Bulk resistance; Equivalent circuit model;

    机译:检测下限;电荷转移;异质结电阻;耐大容量;等效电路模型;

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