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Novel single photon sensors for highly sensitive fluorescence detection systems.

机译:用于高灵敏度荧光检测系统的新型单光子传感器。

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摘要

This dissertation is focused on studies of two types of low cost solid-state photodiodes working as single photon detectors and their applications for highly sensitive fluorescence detection systems.;An operation of the commercial linear avalanche photodiode (Hamamatsu Si APD S9073) has been studied in conjunction with a novel, unique quenching circuit. The operation of the diode in Geiger-mode has been experimentally demonstrated with dead time of ∼50ns. Studies of the dark count of the un-cooled diode showed a very significant enhancement of the dark count with increase of the over-voltage. It has been found that at the over-voltages needed for sensitive photon detection, the dark count reaches 107/sec that puts the diode in the saturation region due to a relatively long quenching delay. The conclusion has been made that for an efficient single photon counting, one needs to cool the diode and to decrease the quenching delay. The schematic of quenching circuit that makes the dead time smaller and less area consuming has been designed in standard 0.6um CMOS technology and simulated using Cadence tools.;A novel type of single photon diode, Silicon Photomultiplier (SiPM), has been studied in single photon counting mode. For the first time, the application of SiPM with external amplifiers for single photon detection to DNA sequencing has been demonstrated. A novel SiPM design, which requires neither external quenching nor amplification for photon counting has been proposed utilizing the unique performance of SiPM, optical cross-talk. A simulator has been developed based on the model of SiPM in Python. The output pulse distribution with different cross-talk probabilities and afterpulsing probabilities has been simulated. Experiments on SiPMs from two manufactures have been done and presented in the dissertation.
机译:本文主要研究两类用作单光子探测器的低成本固态光电二极管及其在高灵敏度荧光检测系统中的应用。;对商用线性雪崩光电二极管(滨松Si APD S9073)的工作进行了研究。结合独特的新颖淬火电路。实验证明了吉格模式下二极管的工作,死区时间约为50ns。对未冷却二极管的暗计数的研究表明,随着过电压的增加,暗计数有非常显着的提高。已经发现,在灵敏的光子检测所需的过电压下,由于相对较长的猝灭延迟,暗计数达到107 /秒,这使二极管进入饱和区域。得出的结论是,为了有效地进行单光子计数,需要冷却二极管并减少猝灭延迟。使用标准的0.6um CMOS技术设计了淬火电路的原理图,该电路使死区时间更小且占用的面积更少,并且使用Cadence工具进行了仿真。;已经研究了一种新型的单光子二极管硅光电倍增管(SiPM)。光子计数模式。首次展示了SiPM与外部放大器一起用于单光子检测的DNA测序应用。利用SiPM的独特性能,即光学串扰,已经提出了一种新颖的SiPM设计,该设计不需要外部猝灭或放大即可进行光子计数。已经基于Python中的SiPM模型开发了一个模拟器。模拟了具有不同串扰概率和后脉冲概率的输出脉冲分布。本文完成了两种制造商的SiPMs的实验,并进行了介绍。

著录项

  • 作者

    Cheng, Lu.;

  • 作者单位

    State University of New York at Stony Brook.;

  • 授予单位 State University of New York at Stony Brook.;
  • 学科 Engineering Electronics and Electrical.
  • 学位 Ph.D.
  • 年度 2009
  • 页码 152 p.
  • 总页数 152
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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