Micro-raman Spectroscopy Characterization Of Polycrystalline Silicon Films Fabricated By Excimer Laser Crystallization

摘要

The rapid recrystallization of amorphous silicon films utilizing excimer laser crystallization (ELC) is presented. The resulting poly-Si films are characterized by Raman spectroscopy. Polycrystalline silicon (poly-Si) films with higher crystallinity can be realized by a dehydrogenation process before ELC. Raman spectra as a function of various excimer laser energy densities are demonstrated. The crystallinity and residual stress of the poly-Si films are determined and discussed.