Performance analysis of several electron/hole transport layers in thin film MAPbI_3-based perovskite solar cells: A simulation study

摘要

Here, several materials such as CuAlTe2, CuSeCN, V2O5, CuxS, CdSe, SnS2, ZnS, ZnO, and MoSe2 are investigated as potential hole/electron transfer layers (HTL/ETLs) in MAPbI3-based perovskite solar cells (PSCs) by the numerical simulation. The potential HTLs are studied while the ETL is TiO2, and on the other hand, Spiro-MeOTAD HTL is utilized for the potential ETLs. The devices' performance is also investigated by optimizing the absorber thickness, doping density as well as defect density of the absorber and the interface layers. The results show that CuAlTe2 HTL and ZnS ETL are the most suitable materials with the highest power conversion efficiencies (PCEs) of 20.19% and 19.41% by applying optimal thicknesses, respectively. Finally, under the optimized condition, a high PCE of 20.97% is obtained for the FTO/ZnS ETL/MAPbI3/CuAlTe2 HTL/Au PSC, proposing this structure as an excellent configuration for thin film solar cells.