机译:Ⅰ型InAs / GaAs_(0.89)Sb_(0.11)和Ⅱ型InAs / GaAs_(0.85)Sb_(0.15)量子点的光致发光比较研究
Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China;
Hebei Univ Coll Phys Sci & Technol Hebei Key Lab Opt Elect Informat & Mat Baoding 071002 Peoples R China|Univ Calif Los Angeles Calif NanoSyst Inst Los Angeles CA 90095 USA;
Univ Arkansas Inst Nanosci & Engn Fayetteville AR 72701 USA;
Photoluminescence; Quantum dots; Semiconductor compound; Band alignment;
机译:通过光致发光研究II型InAs / GaAs_(0.7)Sb_(0.3)量子点的异常光学性质
机译:通过光致发光研究II型InAs / GaAs_(0.7)Sb_(0.3)量子点的异常光学性质
机译:具有相邻InAs量子点应力源层的GaAs_(0.7)Sb_(0.3)/ GaAs II型量子阱
机译:GaAs_(0.7)SB_(0.3)/ GaAs Type-II型阱的光学表征与相邻的InAs量子点复合结构阱很好
机译:变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究
机译:Inas-Gaas和Inas-InGaas-Gaas量子点异质结构的温度依赖性调制反射率和光致发光
机译:Inas(0.15)sb(0.85)/ Insb多量子阱中光孔的能量弛豫。