Properties of silicon implanted with Fe~+ , Ge~+ , Mn~+ ions investigated using a frequency contactless modulated free-carrier absorption technique

摘要

This paper presents results of investigations of Fe+ , Ge+, Mn+ ions implanted silicon samples with the use of the modulated free carrier absorption (MFCA) technique. These ions are significant in a modern electronics. The nondestructive character of the MFCA method makes it very useful for characterization of implanted materials. Spatial distributions and profiles of the amplitudes of the modulated free carrier absorption signal of the implanted silicon samples were measured and analyzed. The amplitude and phase frequency characteristics of the MFCA signal for the ion implanted regions have been measured and interpreted for different wavelengths of the illuminating light. The dependence of the amplitude of the MFCA signal on the lifetime of carriers and the optical absorption coefficient of the implanted layer has been analyzed theoretically and discussed. The influence of the ion implantation process on the values of the optical absorption coefficient and the lifetime of carriers of the implanted layers has been determined.