Carrier dynamics in GaAs-Al_0.46Ga_0.54As superlattice structure grown by molecular beam epitaxy

摘要

Molecular beam epitaxy (MBE)GROWN GaAs-Al_0.46Ga_0.54As wuperlattice(SL)structure containing one thicker single quantum well(SQW)are investigted with use of time-resolved photoluminescence in the temperature range 10-300K. Analysing the temperature dependence of the integrated PL intensity, we observe ther- mally activated carrier transfer from the SL to the SQW, for temperature higher than 70 K. Both radiative and nonradiative recombination times have been extracted from the combined measurements of the PL decay time and the PL-integrated intensity.