Intrinsic light yield and light loss coefficient of Bi_4Ge_3O_(12) single crystals

摘要

In this paper we present the scintillation properties of polished Bi_4Ge_3O_(12) (BGO) crystals grown by the Bridgman method. The light yield (LY) and energy resolution were measured using XP5200B photomul-tiplier. At 662 keV γ-rays, high LY of 9680 photons/MeV and good energy resolution of 8.6% were obtained for a 5 × 5 × 1 mm~3 BGO sample. The intrinsic LY and light loss coefficient were evaluated. The photofraction in pulse height spectrum of 662 keV γ-rays and the mass attenuation coefficient at 59.5 and 662 keV γ-rays were also determined and compared with the theoretical ones calculated using the WinXCom program.