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Light-induced properties of doped Bi_4Ge_3O_(12) single crystals

机译:光诱导的掺杂Bi_4ge_3O_(12)单晶

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Optically homogeneous bismuth germanate Bi_4Ge_3O_(12) single crystals doped with vanadium, cobalt and vanadium plus cobalt have been successfully grown by Czohralski technique with automatically diameter-weight control. The distribution coefficients for individual doping elements are determined. The effect of doping on the light-induced properties of BGO single crystals is studied. Optical absorption spectrum of annealed samples can be strongly modified under ultraviolet illumination. The photochromic effect is optically or thermally reversible from one state to another. Volt-amper charactersitcs show linear behavour and dark conductivity values are s ~ 10-13 (Ω.cm)-1. Holographic grating were successfully recorded in all investigated doped crystals at 514 nm.
机译:Czohralski技术通过自动直径 - 重量控制成功地增长了掺杂含钒,钴和钒加钴的单晶,钴和钒加钴掺杂的单晶。确定各掺杂元件的分配系数。研究了掺杂对BGO单晶的光诱导性质的影响。在紫外线照射下,可以强烈地修饰退火样品的光学吸收光谱。光致变色效果从一个状态光学或热可逆到另一个状态。 Volt-AMPER Chexceitcs显示线性行为和暗电导率值是S〜10-13(ω.cm)-1。在514nm的所有研究掺杂晶体中成功地记录了全息光栅。

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