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Influence of Zn~(2+) doping on the lattice defects and photoluminescence studies of Sr_2CeO_4:Eu~(3+) nanophosphor: Applications for data encryption strategies

机译:Zn〜(2+)掺杂对Sr_2CeO_4:Eu〜(3+)纳米磷的晶格缺陷和光致发光研究:数据加密策略的应用

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摘要

In the present work, luminescent Sr2CeO4:Eu3+ (5 mol %), Zn2+ (0.25-3 mol %) nanophosphors were fabricated by the ultrasound irradiated sonochemical method. The samples prepared with 3 h ultrasound treatment exhibit well crystalline and single phase Sr2CeO4. The dumbbell shaped morphology of the prepared samples was elucidated from both SEM and TEM results. The energy band gap of the prepared samples was estimated and found to be in the range similar to 3.18-3.63 eV. The incorporation of Zn2+ greatly influences the defect and emission intensities, as revealed from photoluminescence and positron lifetime spectroscopy measurements. The enhancement in the photoluminescence emission intensity after Zn2+ incorporation was observed, which may be due to the creation of defects and efficient energy transfer between Zn2+ and Eu3+ or defects that can act as emission centers. The positron lifetime spectroscopy qualitatively explains the concentration of defects (vacancy and voids) which are induced by Zn2+ co-doping. The encryption strategies are provided using the photo luminescent chalk for high level information protection. We believe that the versatile, convenient and user-friendly strategy demonstrated herein will open a new insight for on-site information protection.
机译:在本工作中,通过超声辐照声化学方法制备了发光Sr2CeO4:Eu3 +(5 mol%),Zn2 +(0.25-3 mol%)纳米磷光体。经过3小时超声处理后制备的样品表现出良好的结晶态和单相Sr2CeO4。从SEM和TEM结果阐明了制备样品的哑铃状形态。估计制备样品的能带隙,发现其在类似于3.18-3.63eV的范围内。 Zn2 +的掺入极大地影响了缺陷和发射强度,从光致发光和正电子寿命光谱测量中可以看出。观察到掺入Zn2 +后光致发光发射强度的增强,这可能是由于缺陷的产生以及Zn2 +和Eu3 +之间或可以充当发射中心的缺陷之间的有效能量转移所致。正电子寿命光谱定性地解释了Zn2 +共掺杂引起的缺陷浓度(空位和空隙)。使用光致发光粉笔提供了加密策略,以提供高级信息保护。我们相信,本文演示的多功能,便捷和用户友好的策略将为现场信息保护开辟新的见解。

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