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Nonstoichiometric amorphous silicon carbide films as promising antireflection and protective coatings for germanium in IR spectral range

机译:非化学计量的非晶碳化硅薄膜可作为锗在红外光谱范围内的抗反射和保护涂层

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摘要

A technology for preparation of amorphous nonstoichiometric hydrogenated silicon carbide (a-SixC1-x:H) films using the PE-CVD method has been developed. Such films with refractive index n = 1.8-2.1 are suitable to obtain antireflection effect on germanium in the IR spectral region. Single- and two-sided antireflection coatings of Ge enabled to increase its optical transmission up to 65% and 96% in the maximum transmission, respectively. The obtained films have good mechanical properties (H 12 GPa, E = 100 GPa). Presence of Si-C bonds in the a-SixC1-x:H films restricts their range of application to the spectral interval 2.5-10 mu m. The prepared films are uniform in composition and have high adhesion to the substrate. Variation of deposition conditions makes it possible to obtain a-SixC1-x:H films having high hardness and Young's modulus. High deposition rate, optimal optical properties of the a-SixC1-x:H films and good combination of mechanical properties for the Ge/a-SixC1-x:H film structures make them to be promising for practical application as antireflection and protective coatings for germanium.
机译:已经开发了使用PE-CVD方法制备非晶非化学计量的氢化碳化硅(a-SixC1-x:H)膜的技术。折射率n = 1.8-2.1的这种膜适合于在红外光谱区域中对锗获得抗反射效果。 Ge的单面和双面抗反射涂层能够将其光学透射率分别提高到最大透射率的65%和96%。所获得的膜具有良好的机械性能(H> 12 GPa,E = 100 GPa)。 a-SixC1-x:H膜中Si-C键的存在将其应用范围限制在2.5-10微米的光谱范围内。所制备的膜在组成上是均匀的,并且对基材具有高粘附性。沉积条件的变化使得可以获得具有高硬度和杨氏模量的a-SixC1-x:H膜。高沉积速率,a-SixC1-x:H薄膜的最佳光学性能以及Ge / a-SixC1-x:H薄膜结构的机械性能的良好组合,使其在实际应用中有望用作抗反射和保护涂层锗。

著录项

  • 来源
    《Optical Materials》 |2019年第2期|445-450|共6页
  • 作者单位

    Jilin Univ, Coll Phys, State Key Lab Superhard Mat, 2699 QianjinSt, Changchun 130012, Jilin, Peoples R China|Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine;

    Jilin Univ, Coll Phys, State Key Lab Superhard Mat, 2699 QianjinSt, Changchun 130012, Jilin, Peoples R China|Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine;

    Jilin Univ, Coll Phys, State Key Lab Superhard Mat, 2699 QianjinSt, Changchun 130012, Jilin, Peoples R China;

    Jilin Univ, Coll Phys, State Key Lab Superhard Mat, 2699 QianjinSt, Changchun 130012, Jilin, Peoples R China|Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine;

    Jilin Univ, Coll Phys, State Key Lab Superhard Mat, 2699 QianjinSt, Changchun 130012, Jilin, Peoples R China|Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine;

    Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine;

    Natl Acad Sci Ukraine, V Lashkaryov Inst Semicond Phys, 41 Nauky Ave, UA-03028 Kiev, Ukraine;

    Jilin Univ, Coll Phys, State Key Lab Superhard Mat, 2699 QianjinSt, Changchun 130012, Jilin, Peoples R China;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Germanium; Nonstoichiometric SiC films; Elements of IR optics; Antireflection coatings;

    机译:锗;非化学计量SiC薄膜;红外光学元件;抗反射涂层;

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