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首页> 外文期刊>Optical and quantum electronics >First principle study of structural, electronic, optical, and transport properties of ternary compounds NaGaX_2 (X=S, Se, andTe) in tetragonal chalcopyrite phase
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First principle study of structural, electronic, optical, and transport properties of ternary compounds NaGaX_2 (X=S, Se, andTe) in tetragonal chalcopyrite phase

机译:四方黄铜矿相中三元化合物NaGaX_2(X = S,Se和Te)的结构,电子,光学和传输性质的第一性原理研究

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Eemploying the all electron full potential linearized augmented plane wave plus local orbital (FP-LAPW + lo) method based on density functional theory (DFT) structural, electronic, optical, and transport properties of compounds NaGaX2 (X = S, Se, and Te) in tetragonal phase have been investigated at ground state. The exchange-correlation effects have been included using the Wu Cohen (WC) generalized gradient approximation (GGA) and modified Becke-Johnson (mBJ) exchange potentials. Enthalpy of formation values ensure that crystal structures are stable in tetragonal chalcopyrite phase. Total and partial density of states, and band structures have been plotted to calculate electronic properties which exhibits direct band gap for all compounds. The electronic band gap of NaGaS2 (2.1 eV) is found to be higher than the electronic band gaps of NaGaSe2 (1.7 eV) and NaGaTe2 (1.2 eV) compounds. Using real and imaginary parts of the dielectric function, optical properties such as refractive index (n), extinction coefficient (k), reflectivity (R), absorption coefficient (alpha), and energy loss spectrum (L) were determined. Transport properties like Seebeck coefficient, thermal and electrical conductivities, figure of merit, and power factors have also been reported by combining the results from DFT and Boltzmann transport theory. The high absorption peaks in visible and ultraviolet regions of the energy spectrum and direct band gaps of these compounds ensure that three compounds are promising materials for photovoltaic applications.
机译:基于密度泛函理论(DFT)的化合物NaGaX2的结构,电子,光学和传输性质(X = S,Se和Te),采用全电子全势线性化增强平面波加局部轨道(FP-LAPW + lo)方法)在四方相中已经研究了基态。使用Wu Cohen(WC)广义梯度逼近(GGA)和改良的Becke-Johnson(mBJ)交换势已包括了交换相关效应。形成值的焓确保晶体结构在四方黄铜矿相中稳定。绘制了状态的总和部分密度以及能带结构,以计算出对所有化合物均表现出直接带隙的电子性质。发现NaGaS2(2.1 eV)的电子带隙高于NaGaSe2(1.7 eV)和NaGaTe2(1.2 eV)化合物的电子带隙。使用介电函数的实部和虚部,可以确定光学特性,例如折射率(n),消光系数(k),反射率(R),吸收系数(α)和能量损失谱(L)。通过结合DFT和玻尔兹曼输运理论的结果,还报道了诸如塞贝克系数,热导率,电导率,品质因数和功率因数的输运特性。这些化合物在能谱的可见光区和紫外区的高吸收峰以及这些化合物的直接带隙确保了三种化合物是用于光伏应用的有前途的材料。

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