Strategies to increase the modal gain in heterogeneously integrated III-V amplifiers on silicon-on-insulator

摘要

A novel waveguide shape is proposed to take advantage of the high index contrast in adhesively bonded III-V on silicon-on-insulator (SOI) waveguides for application in on-chip semiconductor optical amplifiers. By decreasing the effective index of the top contact layer, the confinement in the active region can be increased by 70 %, boosting the achievable modal gain and reducing the required device length to achieve a certain gain. This technique could reduce the footprint of amplifiers, lasers and other active devices integrated on the SOI platform.