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机译:硅层的基于石墨烯-MoS_2的表面等离子体共振传感器的性能
Department of Electronics and Communication Engineering Department, Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh 211004, India;
Department of Electronics and Communication Engineering Department, Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh 211004, India;
Department of Physics, Banaras Hindu University, Varanasi, Uttar Pradesh 221005, India;
Electronics and Communication Engineering Department, Bundelkhand Institute of Engineering and Technology, Jhansi, Uttar Pradesh 284128, India;
Department of Electronics and Communication Engineering Department, Motilal Nehru National Institute of Technology Allahabad, Allahabad, Uttar Pradesh 211004, India;
Surface plasmon resonance; Sensor; Silicon; Graphene; MoS_2; Sensitivity;
机译:基于石墨烯-MoS_2混合结构的TiO_2-SiO_2复合层表面等离子体共振传感器的灵敏度增强
机译:使用Poyntance vapience分析用硅层的双金属表面等离子体共振基于双金属表面等离子体谐振的性能优化
机译:利用银和氧化铟层的表面等离子体谐振和有损模式共振基于光学传感器的性能研究:实验研究
机译:通过添加薄的介电层来提高红外区域的表面等离子体共振传感器的性能
机译:基于适体的传感器:使用适体作为目标识别元件,开发电化学和表面等离振子共振传感器。
机译:基于绝缘体上硅肋波导阵列的高性能微集成表面等离子体共振传感器的设计
机译:基于硅绝缘体肋波导阵列的高性能微集成表面等离子体共振传感器设计
机译:基于表面等离子体共振光谱的过程传感器