Are the stacking faults in Cu-Zn-Al able to trap positrons

WANG Jingcheng; YOU Fuqiang; YIN Junlin

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Are the stacking faults in Cu-Zn-Al able to trap positrons

机译：Cu-Zn-Al中的堆垛层错能否俘获正电子

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The phase transformation of Cu-23 at./100Zn-11 at./100 Al alloy from about 5deg.C to 25deg.C has been studied by means of the positron annihilation and transmission electron microscope. It is shown that the stacking faults in the alloy have no remarkable effect on the trapping of positrons.

机译：利用正电子an没和透射电子显微镜研究了Cu-23 at / 100Zn-11 at / 100铝合金从约5℃到25℃的相变。结果表明，合金中的堆垛层错对正电子的俘获没有显着影响。

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《Nuclear Science and Techniques》 |1999年第1期|p.41-43|共3页
作者
WANG Jingcheng; YOU Fuqiang; YIN Junlin;
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正文语种 eng
中图分类原子核物理学、高能物理学;
关键词
Positron annihilation; Transmission electron;

机译：正电子ni灭;透射电子;
入库时间 2022-08-18 00:44:01

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专利

1. Are the stacking faults in Cu-Zn-Al able to trap positrons [J] . Wang Jingcheng, You Fuqiang, Yin Junlin Nuclear Science and Techniques . 1999,第1期

机译：Cu-Zn-Al中的堆垛层错能否俘获正电子
2. Are the stacking faults in Cu-Zn-Al able to trap positrons [J] . 核技术（英文版） . 1999,第001期

机译：Cu-Zn-Al中的堆垛层错能否俘获正电子
3. Transmission electron microscopy study of stacking-fault trapezoids and stacking-fault tubes in ZnSe/GaAs(001) pseudomorphic epitaxial layers [J] . N. Wang, I. K. Sou, K. K. Fung Philosophical Magazine Letters . 1997,第3期

机译：ZnSe / GaAs（001）拟晶外延层中的断层梯形和断层管的透射电镜研究
4. Stacking fault trapezoids, stacking fault tubes and stacking fault tetrahedra in ZnSe/GaAs(001) pseudomorphic epilayers [C] . K K Fung, N Wang, I K Sou Royal Microscopical Society conference on microcopy of semiconducting materials . 1997

机译：ZnSe / GaAs（001）拟晶外延层中的堆积断层梯形，堆积断层管和堆积四面体
5. Study of positron trapping at quantum-dot like copper particles on the surface of iron using positron annihilation induced auger electron spectroscopy. [D] . Nadesalingam, Manori Prasadika. 2003

机译：利用正电子an没诱导的螺旋电子能谱研究正电子在铁表面的量子点状铜颗粒上的俘获。
6. Characterization of 4H- and 6H-Like Stacking Faults in Cross Section of 3C-SiC Epitaxial Layer by Room-Temperature μ-Photoluminescence and μ-Raman Analysis [O] . Viviana Scuderi, Cristiano Calabretta, Ruggero Anzalone, 2020

机译：通过室温μ-光致发光和μ-拉曼分析表征3C-SiC外延层截面中的4H和6H类堆积缺陷
7. The diffraction of X-rays by close-packed crystals containing both `growth stacking faults' and `deformation or transformation stacking faults' [O] . R. Gevers 1954

机译：近填充晶体的衍射X射线，其含有两个`生长堆叠故障'和“变形或转换堆叠故障”
8. Influence of Shallow Trapped State on Positron Specific Trapping Rate in Small-Size Vacancy Clusters [R] . Shen, J. Q. , Lung, C. W. 1988

机译：浅埋状态对小型空位群正电子捕获率的影响

Are the stacking faults in Cu-Zn-Al able to trap positrons

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