Growth mode and texture development in TiN films during magnetron sputtering - An in situ synchrotron radiation study

摘要

For the materials research experimental station of the Rossendorf beamline ROBL at the European Synchrotron Radiation Facility in Grenoble, France, a two magnetron sputter deposition chamber for in situ study of film growth by synchrotron X-ray diffraction and reflectivity was developed. It allows high-quality depositions of compound films and multilayers. Heteroepitaxial layer-by-layer growth of TiN on single crystal MgO(001) was observed by real-time specular X-ray reflectivity showing characteristic oscillations. The pseudomorphic growth was confirmed by high-resolution TEM micrographs. During growth on amorphous SiO_2 on Si(001) substrates, the microstructural development of TiN films was studied in situ as a function of film thickness. With the deposition parameters chosen, a crossover was observed: grains with a (002) plane parallel to the film surface dominate at small thicknesses, while, at larger thicknesses, (111) grains dominate. Recrystallisation was identified as a mechanism that controls this texture development.