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首页> 外文期刊>Nuclear Instruments & Methods in Physics Research. B, Beam Interactions with Materials and Atoms >Effects of target bias voltage on the electrical conductivity of DLC films deposited by PBII/D with a bipolar pulse
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Effects of target bias voltage on the electrical conductivity of DLC films deposited by PBII/D with a bipolar pulse

机译:目标偏压对双极性脉冲PBII / D沉积DLC薄膜电导率的影响

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摘要

Energetic electrons and ions, which were induced by positive and negative pulses in C_7H_8 plasma, respectively, were bombarded alternately on a substrate in PBII/D process. The effects of pulsed negative bias voltage on the electrical conductivity of DLC films were studied. Conductivity and hardness of DLC films were measured by a four-point-probe method and microindentation method. Hydrogen concentration, sp~2/sp~3 ratio, Raman I(D)/I(G) ratio were also measured by ERD, XPS, Raman spectroscopy and the structure of the films was observed by HRTEM. As a result, the resistivity of the film decreased with negative pulse voltage and reached to 1 mΩ cm at -20 kV, and the hardness was 5.4 GPa. It has been shown that the electrically conductive DLC films are composed with cluster of graphite-like aggregate. The technique can be applied for conductive DLC coatings on three-dimensional substrate with high adhesion strength.
机译:在PBII / D过程中,分别在C_7H_8等离子体中由正脉冲和负脉冲感应的高能电子和离子在基板上交替轰击。研究了脉冲负偏压对DLC薄膜电导率的影响。通过四点探针法和微压痕法测量DLC膜的电导率和硬度。氢浓度,sp〜2 / sp〜3比,拉曼I(D)/ I(G)比也通过ERD,XPS,拉曼光谱法测量,并通过HRTEM观察膜的结构。结果,膜的电阻率随着负脉冲电压而降低,并且在-20kV下达到1mΩcm,并且硬度为5.4GPa。已经表明,导电DLC膜由类石墨聚集体组成。该技术可以应用于具有高粘附强度的三维基体上的导电DLC涂层。

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