A study on 120 MeV Ag~(9+) irradiation induced modifications in structural, electrical and optical behavior of ZnSnO_3 thin films

摘要

Spray deposited ZnSnO_3 thin films have been irradiated with 120 MeV Ag~(9+) ions at the fluence of 1 × 10~(12) and 1 × 10~(13) ions cm~(-2). The structural, electrical and optical properties of the pristine and irradiated films were studied using X-ray diffraction, atomic force microscopy, optical transmittance and Hall measurement system. X-ray diffraction studies revealed that the film is amorphized at higher ion fluence. The AFM study of the films implied that roughness of the pristine film increases from 14 to 19 nm after the irradiation. A minimum resistivity of 3.31×10~(-2) Ω cm and maximum carrier concentration of 1.31 × 10~(19) cm~(-3) have been achieved when the film was irradiated with the fluence of 1 × 10~(13) ions cm~(-2). The band gap value decreases from 3.60 to 3.13 eV for the film irradiated with 1 × 10~(13) ions cm~(-2).