Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

摘要

Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin (～10nm) oxide/suboxide heterostructures (e.g. HfO_2/HfO_x or Ta_2O_5/TaO_x) is difficult using conventional film deposition techniques. In this study, ion-implantation is shown to provide an alternative means of synthesizing such structures, with results reported for Ta_2O_5/TaO_x heterostructures fabricated by oxygen-implantation of Ta. The electrical properties of the fabricated heterostructures are discussed with reference to the physical structure of the samples determined from transmission electron microscopy and X-ray photoelectron spectroscopy.