Excess noise factor of neutron-irradiated silicon avalanche photodiodes

摘要

A Monte Carlo simulation code has been developed in order to analyse avalanche gain and excess noise factor variation of the well-defined silicon avalanche photodiode (APD) geometry as a function of the neutron fluences up to 2 x 10~(13) neutrons/cm~2. The results show that the neutron fluence has an influence on the excess noise factor for the same mean avalanche gain for the PbWO_4 light.