Full 3D simulations of BNL one-sided silicon 3D detectors and comparisons with other types of 3D detectors

摘要

Full three-dimensional (3D) simulations have been carried out on the BNL one-sided single-type column and dual-type column 3D Si detectors (p-type substrate). Due to the facts that columns are not etched all the way through, all electrodes are on the front side, and the backside is neither supported nor processed at all, the BNL one-sided 3D detectors are true one-sided detectors. Simulations show that the volume under the columns, where it is supposed to be dead space (about 10%), can be depleted at high biases with some modest electric field, leading to the possibility of recovering some sensitivity from this region. This region can also provide some sensitivity to particle tracks directly through the columns. The dual-type column detectors are the best in radiation hardness due to their low depletion voltages and short drift distances. Single-type column detectors are more radiation hard than the planar detectors due to their lower depletion voltages. Single-type column detectors are easier to process than dual-type column detectors, but have a more complicated, non-uniform electric field profile. The BNL one-sided 3D detectors were compared to various 3D detector structures developed by other institutes. The field profiles for all types of dual-type column 3D detectors are similar with just some minor differences on both surfaces (front and back). The BNL single-type column one-sided 3D detectors have some major differences from the Trento ones: (1) the high electric field is on the sensing electrode side (pixel or strip); and (2) it can develop some high electric field along the junction column as the bias voltage increases.