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Crystal growth and scintillation properties of Pr-doped oxyorthosilicate for different concentration

机译:掺Pr掺杂原硅氧酸盐的晶体生长和闪烁特性

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摘要

0.05, 0.1 and 0.25 mol% Pr (with respect to Lu) doped Lu_2SiO_5 (LSO) single crystals were grown by the micro-pulling down ((i-PD) method. The grown crystals were transparent, and a slight segregation of Pr~3+ was observed both in the crystal cross-section and growth direction. Transparency in the visible wavelength range was about 80% in all the crystals. Intense absorptions related with the Pr~(3+) 4f-5d transitions were observed around 230 and 255 nm, and weak absorptions due to the 4f-4f transitions were detected around 450 nm. In radioluminescence spectra, the Pr~(3+) 5d-4f transitions were observed around 275and 310 nm, and emissions due to the 4f-4f transition were observed around 500 nm. In the pulse height analysis using ~(137)Cs gamma-ray excitation, Pr 0.1% doped sample showed the highest light yield of 2,800 ph/MeV. In the decay time measurements using different excitation sources (photo-luminescence, X- and gamma-ray), two different processes related to the 5d-4f emission peaks were found. Fast decay component corresponds to direct excitation of Pr~(3+) (4-6 ns) and slower component (25 ns) reflects the energy migration process from the host lattice to the emission center.
机译:通过微拉((i-PD)方法生长了0.05、0.1和0.25 mol%的Pr(相对于Lu)掺杂的Lu_2SiO_5(LSO)单晶,生长的晶体是透明的,Pr〜在晶体的横截面和生长方向均观察到3+,所有晶体的可见光波长范围内的透明度约为80%,与Pr〜(3+)4f-5d跃迁相关的强烈吸收在230和60 nm附近观察到。 255 nm,在450 nm附近检测到由4f-4f跃迁引起的弱吸收;在放射发光光谱中,在275 nm和310 nm附近观察到Pr〜(3+)5d-4f跃迁,以及4f-4f跃迁引起的发射。在〜(137)Cs伽马射线激发下的脉冲高度分析中,掺杂0.1%Pr的样品显示出最高2,800 ph / MeV的光通量。发光,X射线和伽玛射线),与5d-4f发射有关的两个不同过程发现了高峰。快衰变分量对应于Pr〜(3+)的直接激发(4-6 ns),慢衰变分量(25 ns)反映了从主晶格到发射中心的能量迁移过程。

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    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan,Nihon Kessho Kogaku Co. Ltd, Japan;

    New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan,Institute of Physics AS CR, Cukrovarnicka 10, Prague 6, J 62-53, Czech Republic;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan;

    Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai, Miyagi 980-8577, Japan, New Industry Creation Hatchery Center (NICHe) 6-6-10 Aoba, Aramaki, Aoba-ku, Sendai, Miyagi 980-8579, Japan;

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  • 正文语种 eng
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  • 关键词

    scintillator; pr~(3+); oxyorthosilicate; crystal growth from the melt; radiation response;

    机译:闪烁体pr〜(3+);原硅酸熔体中的晶体生长;辐射反应;

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