...
首页> 外文期刊>Nuclear Instruments & Methods in Physics Research >Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress
【24h】

Performance of a TiN-coated monolithic silicon pin-diode array under mechanical stress

机译:机械应力作用下涂有TiN的单片硅Pin-二极管阵列的性能

获取原文
获取原文并翻译 | 示例

摘要

The Karlsruhe Tritium Neutrino Experiment (KATRIN) will detect tritium P-decay electrons that pass through its electromagnetic spectrometer with a highly segmented monolithic silicon pin-diode focal-plane detector (FPD). This pin-diode array will be on a single piece of 500-um-thick silicon, with contact between titanium nitride (TiN)-coated detector pixels and front-end electronics made by spring-loaded pogo pins. The pogo pins will exert a total force of up to 50 N on the detector, deforming it and resulting in mechanical stress up to 50 MPa in the silicon bulk. We have evaluated a prototype pin-diode array with a pogo-pin connection scheme similar to the KATRIN FPD. We find that pogo pins make good electrical contact to TiN and observe no effects on detector resolution or reverse-bias leakage current which can be attributed to mechanical stress.
机译:卡尔斯鲁厄Tri中微子实验(KATRIN)将使用高度分段的单片硅针二极管焦平面探测器(FPD)检测通过其电磁光谱仪的meter P衰变电子。该引脚二极管阵列将位于一块500微米厚的硅片上,氮化钛(TiN)涂层检测器像素与由弹簧加载的Pogo引脚制成的前端电子器件之间具有接触。弹簧针将在检测器上施加最大50 N的总力,使其变形,并在硅块中产生高达50 MPa的机械应力。我们用类似于KATRIN FPD的pogo-pin连接方案评估了原型Pin-二极管阵列。我们发现pogo引脚与TiN形成了良好的电接触,并且没有观察到对检测器分辨率或反向偏置泄漏电流的影响,后者可能归因于机械应力。

著录项

  • 来源
    《Nuclear Instruments & Methods in Physics Research 》 |2012年第2012期| p.46-50| 共5页
  • 作者单位

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA,acific Northwest National Lab., Richland, WA 99354, USA.;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA,acific Northwest National Lab., Richland, WA 99354, USA;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA,Department of Physics, University of North Carolina,Chapel Hill. NC 27599, USA.;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA,Department of Physics, University of California, SantaBarbara, CA 93106, USA.;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA;

    Center for Experimental Nuclear Physics and Astrophysics and Department of Physics, University of Washington, Seattle, WA 98195, USA;

  • 收录信息
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    silicon; pin diode; mechanical stress; leakage current; titanium nitride; pogo pin;

    机译:硅;pin二极管;机械应力;漏电流;氮化钛;pogo pin;

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号