机译:暴露于高通量等离子体的自毁钨中氘保留的饱和度
FOM Institute for Plasma Physics Rijnhuizen, NL-3439 MN Nieuwegein, The Netherlands;
Department of Engineering Physics, University of Wisconsin-Madison, Madison, WI, USA,Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching, Germany;
Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching, Germany;
Max-Planck-Institut fuer Plasmaphysik, Boltzmannstrasse 2, D-85748 Garching, Germany;
FOM Institute for Plasma Physics Rijnhuizen, NL-3439 MN Nieuwegein, The Netherlands;
FOM Institute for Plasma Physics Rijnhuizen, NL-3439 MN Nieuwegein, The Netherlands,University of Amsterdam, Science Park 904, NL-1098 XH Amsterdam, The Netherlands;
FOM Institute for Plasma Physics Rijnhuizen, NL-3439 MN Nieuwegein, The Netherlands;
机译:在高表面温度下暴露于高通量等离子体的自毁钨中的氘保留降低
机译:暴露于高通量氘等离子体中的钨和钨钽合金中的氘保留
机译:高通量氘等离子体暴露的钨和钨钽合金的表面改性及其对氘保留的影响
机译:钨和钼暴露于低能量,高通量氘质等离子体的表面改性和氘保留
机译:氩气对序贯和同时离子辐射下多晶硅钨氘保留的影响
机译:暴露于氢等离子体的二硫化钨纳米粒子的氢化学构型和热稳定性
机译:自我受损钨中的氘潴留饱和度暴露于高通量等离子体