'Highest-bandwidth, highest density' non-volatile random access memory

摘要

Toshiba Corp of Japan has announced the development of a prototype of a ferroelectric random access memory (FeRAM). The chip realizes storage of 128 Mb and has read and write speeds of rn1.6 GB.s~(-1), the most advanced combination of performance and density yet achieved. rnThe FeRAM modifies the company's original chain FeRAM architecture, which contributes to chip scaling, with an architecture that prevents cell signal degradation, the usual trade-off from chip scaling. This combination realizes an FeRAM with a density of 128 Mb.