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Deterministic write concept unveiled by imec

机译:由IMEC揭开的确定性写概念

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摘要

At the 2020 Symposia on VLSI Technology and Circuits, imec has presented a deterministic write scheme for voltage-controlled magnetic anisotropy (VCMA) magnetic random access memories (MRAMs), removing the need for pre-reading the device before writing. According to imec, this will significantly improve the write duty cycle of the memory, enabling ns-scale write speeds. Imec also demonstrated a manufacturable solution for external-field-free VCMA switching operation. Both innovations address fundamental write operation challenges for VCMA MRAMs, and could help to make them viable solution for future high-performance low-power memory applications. Voltage-controlled MRAM operation has recently been introduced to bring down the power consumption of spin-transfer-torque MRAM (STT-MRAM) devices - a class of non-volatile, high-density, high-speed memories. While writing STT-MRAM memory cells is performed by means of a current (injected perpendicular into a magnetic tunnel junction), VCMA MRAM uses an electric field (hence, a voltage) for its write operation - this process is far less energy consuming.
机译:在2020年的VLSI技术和电路上,IMEC提出了一种用于电压控制磁各向异性(VCMA)磁随机接入存储器(MRAM)的确定性写方案,除以在写入之前预先读取设备的需要。根据IMEC的说法,这将显着改善内存的写入占空比,实现NS级写入速度。 IMEC还展示了对外部免现场VCMA切换操作的可制造解决方案。这两种创新都会解决VCMA MRAM的基本撰写挑战,并有助于为未来的高性能低功耗内存应用程序提供可行的解决方案。最近引入了电压控制的MRAM操作以降低自旋转移扭矩MRAM(STT-MRAM)器件的功耗 - 一类非易失性,高密度,高速记忆。在通过电流(垂直于磁隧道结的注入)进行写入STT-MRAM存储器单元时,VCMA MRAM使用电场(因此,电压)进行写入操作 - 该过程远小得多。

著录项

  • 来源
    《New Electronics》 |2020年第12期|6-6|共1页
  • 作者

    NEIL TYLER;

  • 作者单位
  • 收录信息 美国《工程索引》(EI);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

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