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Two-dimensional normal-state quantum oscillations in a superconducting heterostructure

机译:超导异质结构中的二维常态量子振荡

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摘要

Semiconductor heterostructures provide an ideal platform for studying high-mobility, low-density electrons in reduced dimensions. The realization of superconductivity in heavily doped diamond, silicon, silicon carbide and germanium suggests that Cooper pairs eventually may be directly incorporated in semiconductor heterostructures, but these newly discovered superconductors are currently limited by their extremely large electronic disorder. Similarly, the electron mean free path in low-dimensional superconducting thin films is usually limited by interface scattering, in single-crystal or polycrystalline samples, or atomic-scale disorder, in amorphous materials, confining these examples to the extreme 'dirty limit'. Here we report the fabrication of a high-quality superconducting layer within a thin-film heterostructure based on SrTiO_3 (the first known superconducting semiconductor). By selectively doping a narrow region of SrTiO_3 with the electron-donor niobium, we form a superconductor that is two-dimensional, as probed by the aniso-tropy of the upper critical magnetic field. Unlike in previous examples, however, the electron mobility is high enough that the normal-state resistance exhibits Shubnikov-de Haas oscillations that scale with the perpendicular field, indicating two-dimensional states. These results suggest that delta-doped SrTiO_3 provides a model system in which to explore the quantum transport and interplay of both superconducting and normal electrons. They also demonstrate that high-quality complex oxide heterostructures can maintain electron coherence on the macroscopic scales probed by transport, as well as on the microscopic scales demonstrated previously.
机译:半导体异质结构为研究尺寸缩小的高迁移率,低密度电子提供了理想的平台。重掺杂金刚石,硅,碳化硅和锗中超导性的实现表明,库珀对最终可能直接掺入半导体异质结构中,但是这些新发现的超导体目前受到其极大的电子无序性的限制。同样,低维超导薄膜中的电子平均自由程通常受单晶或多晶样品中的界面散射或无定形材料中原子尺度无序的限制,将这些示例限制在极端的“脏物极限”内。在这里,我们报告在基于SrTiO_3(第一个已知的超导半导体)的薄膜异质结构中制造高质量的超导层。通过用电子给体铌选择性掺杂SrTiO_3的狭窄区域,我们形成了二维的超导体,这是由上部临界磁场的各向异性所探测到的。但是,与前面的示例不同,电子迁移率足够高,以至于常态电阻表现出Shubnikov-de Haas振荡,该振荡随垂直场成比例,表示二维状态。这些结果表明,δ掺杂SrTiO_3提供了一个模型系统,可在其中探索超导和正常电子的量子输运和相互作用。他们还证明,高质量的复合氧化物异质结构可以在通过运输探测的宏观尺度以及先前证明的微观尺度上保持电子相干性。

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  • 来源
    《Nature》 |2009年第7272期|487-490|共4页
  • 作者单位

    Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan;

    Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan;

    Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

    Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan Department of Physics, Pusan National University, Busan 609-735, South Korea;

    Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan;

    Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan Japan Science and Technology Agency, Kawaguchi, Saitama 332-0012, Japan;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);美国《化学文摘》(CA);
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  • 入库时间 2022-08-18 02:55:40

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