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机译:基于二维材料缩放CMOS器件的六边形氮化物作为绝缘体的性能限制
TU Wien Inst Microelect Vienna Austria;
TU Wien Inst Microelect Vienna Austria|Ioffe Inst St Petersburg Russia;
Swiss Fed Inst Technol Integrated Syst Lab Zurich Switzerland;
TU Wien Inst Microelect Christian Doppler Lab Single Defect Spect Semicon Vienna Austria;
TU Wien Inst Photon Vienna Austria;
Natl Inst Mat Sci Funct Mat Res Ctr Res Ctr Funct Mat Tsukuba Ibaraki Japan;
Natl Inst Mat Sci Int Ctr Mat Nanoarchitecton Tsukuba Ibaraki Japan;
TU Wien Inst Photon Vienna Austria;
TU Wien Inst Microelect Christian Doppler Lab Single Defect Spect Semicon Vienna Austria;
King Abdullah Univ Sci & Technol KAUST Phys Sci & Engn Div Thuwal Saudi Arabia;
Ioffe Inst St Petersburg Russia;
Swiss Fed Inst Technol Integrated Syst Lab Zurich Switzerland;
TU Wien Inst Microelect Vienna Austria;
机译:六方氮化硼与准独立外延石墨烯的集成:面向晶圆级高性能器件
机译:基于二维材料和六方氮化硼作为光限制层的片上集成光子电路
机译:基于二维材料的片上集成光电电路和六边形氮化物作为光学限制层
机译:六方氮化硼:高性能OTFT的材料奥德赛
机译:金属绝缘体 - 金属装置的单层六边形氮化硼膜的分子束外延生长
机译:大面积多层六方氮化硼的合成以提高材料性能
机译:基于二维材料的片上集成光电电路和六边形氮化物作为光学限制层