Electrical ohmic contacts can be simultaneously formed on silicon carbide (SiC) semiconductors having donor and acceptor impurities (n- and p-type doping, respectively). This implies that such contacts can be formed on SiC layers in one process step during the fabrication of the semiconductor device. This also means that the multiple process steps for fabricating contacts onto n- and p-type surfaces, which is characteristic of the prior art, will be greatly reduced, thereby reducing time and cost, and increasing yield (more process steps and complexity increases chances for lower yields). Another significance of this invention is that this scheme can serve as a non-discriminatory, universal ohmic contact to both n- and p-type SiC, without compromising the reliability of the specific contact resistivity when operated at temperatures in excess of 600 ℃.
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