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首页> 外文期刊>NASA Tech Briefs >Design of Double Layer Rectenna Array for Fault Isolation of Schottky Diode in Operation Beyond V-Band Frequencies
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Design of Double Layer Rectenna Array for Fault Isolation of Schottky Diode in Operation Beyond V-Band Frequencies

机译:V频带以上工作时用于肖特基二极管故障隔离的双层Rectenna阵列的设计

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Microwave power transmission using rectenna technology has attracted a strong interest in conjunction with wireless electric power delivery to infrastructure and subjects located at a remote place. A typical rectenna, which is a major component of the wireless power transmission technology, consists of an antenna, a Schottky diode, and low-pass filters for low-frequency electromagnetic wave isolation in the device. To obtain high efficiency, an electromagnetic wave is collected through a high-resonance antenna, and the AC mode of coupled wave energy is delivered to a Schottky diode that rectifies AC power into DC power. By connecting rectennas in series or parallel, or in mixed way - as well as enlarging the receiving area - the rectenna array can capture microwave energy into a desirable mode of high power.
机译:与向位于偏远地区的基础设施和对象的无线电力输送相结合,使用整流天线技术的微波功率传输引起了强烈的兴趣。典型的整流天线是无线电力传输技术的主要组成部分,它由天线,肖特基二极管和用于设备中低频电磁波隔离的低通滤波器组成。为了获得高效率,通过高谐振天线收集电磁波,并将耦合波能量的交流模式传递到肖特基二极管,该二极管将交流电整流为直流电。通过串联或并联或以混合方式连接整流天线-并扩大接收面积-整流天线阵列可以将微波能量捕获为所需的高功率模式。

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    《NASA Tech Briefs》 |2016年第6期|32-33|共2页
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