The First in a Family of Versatile High Power GaN Transistors

摘要

RFMD has developed a portfolio of Gallium Nitride (GaN) on Silicon Carbide (SiC) high power amplifiers and just recently released the first product from a family of discrete unmatched power transistors. The RF3931 is a 48 V, 30 W high power discrete transistor that operates in the DC to 3 GHz frequency range and is designed for commercial wireless infrastructure, defense/military, industrial/scientific/medical, test instrumentation and general purpose broadband amplifier applications.