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首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >Impact of Metallization Layer Structure on the Performance of G-Band Branch-Line Couplers
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Impact of Metallization Layer Structure on the Performance of G-Band Branch-Line Couplers

机译:金属化层结构对G带支线耦合器性能的影响

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摘要

Five different versions of grounded coplanar waveguide (GCPW) branch-line couplers on GaAs were EM simulated, processed and investigated for operation in G-band (140–220 GHz), based on different layer structures (including 2 or 3 metallization layers) and layouts. The best results have been obtained with the structures based on a continuous galvanic metal in the central conductor line and ohmic connections between top ground planes, reducing the insertion losses by 0.8 dB. A measured amplitude imbalance less than 0.5 dB from 160 to 200 GHz (22%), with a coupler insertion loss lower than 1.3 dB was achieved for a 3 metallization layer branch-line coupler.
机译:基于不同的层结构(包括2层或3层金属化层),对GaAs上的五种不同版本的接地共面波导(GCPW)支线耦合器进行了EM仿真,处理和研究,以在G波段(140-220 GHz)中运行。布局。使用基于中心导线中连续的电镀金属和顶部接地层之间的欧姆连接的结构获得了最佳结果,从而将插入损耗降低了0.8 dB。对于3金属化层支线耦合器,在160至200 GHz范围内测得的振幅不平衡度小于0.5 dB(22%),耦合器插入损耗小于1.3 dB。

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