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首页> 外文期刊>Microwave and Wireless Components Letters, IEEE >A Back-Gate Coupling Quadrature Voltage-Control Oscillator Embedded With Self Body-Bias Schema
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A Back-Gate Coupling Quadrature Voltage-Control Oscillator Embedded With Self Body-Bias Schema

机译:内置自偏置架构的背栅耦合正交压控振荡器

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A quadrature voltage-controlled oscillator was designed with back-gate coupling and embedded self body-biasing and implemented with the TSMC 0.18 $mu{rm m}$ 1P6M CMOS technology. Without using any extra negative bias-pin in the current-reuse structure, this embedded body-bias schema makes the switching transistors become forward body-biased in the duration of turn-on. It is not only beneficial for low-voltage operation, but also achieves a high oscillating output power ($-2.5~{rm dBm}$) with less supply power (2.5 mW). The percentage of frequency tuning range is 17.5% (from 4.60 to 5.48 GHz). The phase noise is $-114 ~{rm dBc}/{rm Hz}$ at 1-MHz offset from the carrier frequency of 5.48 GHz.
机译:设计了具有背栅耦合和嵌入式自体偏置的正交压控振荡器,并采用TSMC 0.18μm1P6M CMOS技术实现。在电流重用结构中无需使用任何额外的负偏置引脚,这种嵌入式的本体偏置方案使开关晶体管在导通期间变为正向本体偏置。它不仅有利于低电压工作,而且还能以较少的电源功率(2.5 mW)实现高振荡输出功率($ -2.5〜{rm dBm} $)。频率调谐范围的百分比为17.5%(从4.60到5.48 GHz)。在距5.48 GHz载波频率1-MHz处,相位噪声为-114〜{rm dBc} / {rm Hz} $。

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