A workload-aware flash translation layer enhancing performance and lifespan of TLC/SLC dual-mode flash memory in embedded systems

摘要

Similar to traditional NAND flash memory, triple-level cell (TLC) flash memory is used as secondary storage to meet the fast growing demands on storage capacity. TLC flash memory exhibits attractive features such as shock resistance, high density, low cost, non-volatility and low access latency natures. However, TLC flash memory also has some extra limitations, such as write disturbance, low performances and very limited cycles compared to single-level cell (SLC) flash memory.