Localization and physical analysis of dielectric weaknesses for state-of-the-art deep trench based DRAM products

摘要

Stressed deep trench capacitors of Dynamic Random Access Memories (DRAM) were analyzed regarding the localization within a test array. A preparation method to find the position within the failing trench and to give information for process improvements is reported. Differences between the dielectrics nitride/oxide and alumi-numoxide were seen. The investigations were done mostly for trench geometries of a 110nm technology. One first preparation was also successful for a 90nm technology with enlarged trench surfaces by hemispherical silicon grains (HSG).