Influence of nitrogen on carrier localization in InGaAsN/GaAs single quantum wells

摘要

We have investigated a set of In_(0.41)Ga_(0.59)As_(1―y)N_y/GaAs SQW structures grown by solid source MBE with nitrogen concentrations up to 5.2%. To study the localization of carriers we performed PL measurements at the temperature range between 10 and 290 K. We found that the only at low temperatures the carriers are localised and the localisation energy changes from 0 to 12 meV, depending on N content. At low temperatures we can observe S-shaped energy peak behaviour for structures with high nitrogen content. Detailed investigations of the optical properties of QW system, was possible due to the room temperature photoreflectance measurements.