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Beating of the oscillations in the magnetocapacitance of a MODFET with Rasba spin-orbit interaction

机译:具有Rasba自旋轨道相互作用的MODFET的磁电容振荡的跳动

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The effect of Rasba spin-orbit interaction (SOI) on the magnetocapacitance of the 2DEG in a MODFET is investigated. We present calculations on the density of states (DOS) of the 2DEG in a MODFET under the influence of both Rasba SOI and weak two-dimensional periodic modulation. Adopting a Gaussian broadening of magnetic-field-dependent width, we present a simple expression for the DOS, valid for the relevant weak magnetic fields and modulation strengths. In the presence of Rasba SOI and for weak potential modulation strengths, a typical beating pattern of the magnetocapacitance oscillations is observed in the low magnetic filed range. A simple relation that predicts the positions of nodes in the beating patterns is obtained. The interplay between the SOI and the periodic potential modulation is discussed.
机译:研究了Rasba自旋轨道相互作用(SOI)对MODFET中2DEG的磁电容的影响。我们目前在Rasba SOI和弱二维周期性调制的影响下,对MODFET中2DEG的状态密度(DOS)进行计算。通过采用取决于磁场的宽度的高斯加宽,我们给出了DOS的简单表达式,适用于相关的弱磁场和调制强度。在存在Rasba SOI的情况下,并且对于弱电势调制强度,在低磁场范围内观察到磁电容振荡的典型跳动模式。获得一个简单的关系,该关系可以预测跳动模式中节点的位置。讨论了SOI与周期性电势调制之间的相互作用。

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